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NEWS / 215. H Uchiyama, TH Liu, T Ono, J Fujise, B Liao, S Ju, G Chen, J Shiomi, „Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics", Physical Review Materials 7 (10), 104601 (2023). [https://doi.org/10.1103/PhysRevMaterials.7.104601]
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TOP /
NEWS / 215. H Uchiyama, TH Liu, T Ono, J Fujise, B Liao, S Ju, G Chen, J Shiomi, „Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics", Physical Review Materials 7 (10), 104601 (2023). [https://doi.org/10.1103/PhysRevMaterials.7.104601]
215. H Uchiyama, TH Liu, T Ono, J Fujise, B Liao, S Ju, G Chen, J Shiomi, „Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics", Physical Review Materials 7 (10), 104601 (2023). [https://doi.org/10.1103/PhysRevMaterials.7.104601]2023.04.11 Tue
H Uchiyama, TH Liu, T Ono, J Fujise, B Liao, S Ju, G Chen, J Shiomi, „Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics", Physical Review Materials 7 (10), 104601 (2023). [https://doi.org/10.1103/PhysRevMaterials.7.104601]
